to ? 126 1. emitter 2. collector 3. base to-126 plastic-encapsulate transistors MJE172 transistor (pnp) features z low power audio amplifier z low current, high speed switching applications maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-1ma,i e =0 -100 v collector-emitter breakdown voltage v (br)ceo i c =-10ma,i b =0 -80 v emitter-base breakdown voltage v (br)ebo i e =-1ma,i c =0 -7 v collector cut-off current i cbo v cb =-100v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-7v,i c =0 -0.1 a h fe(1) v ce =-1v, i c =-100ma 50 250 h fe(2) v ce =-1v, i c =-500ma 30 dc current gain h fe(3) v ce =-1v, i c =-1.5a 12 i c =-500ma,i b =-50ma -0.3 v collector-emitter saturation voltage v ce(sat) i c =-3a,i b =-600ma -1.7 v i c =-1.5a,i b =-150ma -1.5 v base-emitter saturation voltage v be(sat) i c =-3a,i b =-600ma -2 v base-emitter voltage v be v ce =-1v, i c =-500ma -1.2 v collector output capacitance c ob v cb =-10v,i e =0, f=10mhz 50 pf transition frequency f t v ce =-10v,i c =-100ma, f=10mhz 50 mhz symbol parameter value unit v cbo collector-base voltage -100 v v ceo collector-emitter voltage -80 v v ebo emitter-base voltage -7 v i c collector current -3 a p c collector power dissipation 1.5 w r ja thermal resistance from junction to ambient 83 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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